, d nc. 20 stern ave. springfield, new jersey 07081 u.s.a. features direct replacement for siliconix dpad series high on isolation excellent capacitance matching 20fa acr<0.2pf absolute maximum ratings1 @ 25c (unless otherwise stated) maximum temperatures storage temperature operating junction temperature -55cto+150c -55cto+150c maximum power dissipation continuous power dissipation (dpad)3 500mw maximum currents forward current (dpad) 50ma telephone: (973) 376-2922 (212) 227-6005 dpad series monolithic dual pico ampere diodes dpad to-72 top view c2 dpad1 to-78 top view case & substrate c2 x-"^^ a1 * case and pin 4 must be floating on all to-78 case devices common electrical characteristics @ 25c (unless otherwise stated) symbol bvr vf cri- cr2\s characteristic reverse breakdown voltage forward voltage differential capacitance (acr) total reverse capacitance dpad1 dpad2,5,10,20,50,100 sstdpad5,50,100 dpad1 all others dpad1 dpad2, 5,10, 20,50, 100 sstdpad5,50,100 min. -45 -45 -30 typ. 0.8 max. 1.5 0.2 0.5 0.8 2.0 4.0 units pf conditions lr=-1ua if= 1ma vr = -5v, mmhz specific electrical characteristics @ 25c (unless otherwise stated) symbol ir characteristic maximum reverse leakage current2 (sst)dpadi (sst)dpad2 (sst)dpads (sst)dpadio (sst)dpad20 (sst)dpad50 (sst)dpadioo dpad2 -1 -2 -5 -10 -20 -50 -100 sstdpad2 -5 -50 -100 units pa conditions vr = -20v quality semi-conductors
figure 1. operational amplifier protection input differential voltage limited to 0.8v (typ) by dpads di and d2 common mode input voltage limited by dpads ds and 04 to 15v. figure 2. sample and hold circuit typical sample and hold circuit with clipping. dpad diodes reduce offset voltages fed capacitively from the jfet switch gate. figure 1 dpad10 d1 o- y.d2 +15v -15v f figure 2 i ein control, signal +v -v dpad1 t " d1 2n4393 c i= +v o to-72 four lead to-78 0.335 0034 soic 0.014 0.018 0021 l5 ~l o.oso jl 0.189 0.196 0.150 t_ 0.157 l. 0.0075 0.0098 kl- r 0.0040 0.0098 0.2284 0.2440 ^^ dimensions in inches all dimensions in inches
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